NP90N04VDG
350
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
1000
FORWARD TRANSFER CHARACTERISTICS
300
250
200
150
100
50
0
10 V
V GS = 4.5 V
Pulsed
100
10
1
0.1
0.01
0.001
0.0001
T ch = ? 55 ° C
? 25 ° C
25°C
75 ° C
125 ° C
150 ° C
175 ° C
V DS = 10 V
Pulsed
0
0.5
1
1.5
2
2.5
3
0
1
2
3
4
V DS - Drain to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
V GS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
3
2
100
10
25 ° C
75 ° C
125 ° C
T ch = ? 55 ° C
? 25 ° C
175 ° C
1
0
V DS = V GS
I D = 250 μ A
1
V DS = 5 V
Pulsed
-75
-25
25
75
125
175
225
0.1
1
10
100
T ch - Channel Temperature - ° C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
10
I D - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
10
I D = 45 A
8
6
4
V GS = 4.5 V
8
6
4
Pulsed
2
0
10 V
Pulsed
2
0
1
10
100
1000
0
4
8
12
16
20
4
I D - Drain Current - A
Data Sheet D19791EJ1V0DS
V GS - Gate to Source Voltage - V
相关PDF资料
NP90N04VLG-E1-AY MOSFET N-CH TO-252
NP90N04VUG-E1-AY MOSFET N-CH TO-252
NP90N06VLG-E1-AY MOSFET N-CH 60V 90A TO-252
NPC-1210-100G/A/D SENSOR PRES 100PSIA 0-100MV DIP
NPC-1220-100G/A/D SENSOR PRES 100PSIA 0-50MV DIP
NPC-410-100G/A/D SENSOR PRES 100PSIA 0-100MV DIP
NPP-301B-700A SENSOR PRES 100PSIA SO8 SMD
NT-54D0-0487 LIGHT ENGINE TITAN TURBO DAY WHT
相关代理商/技术参数
NP90N04VDG-E2-AY 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR
NP90N04VLG-E1-AY 功能描述:MOSFET N-CH TO-252 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
NP90N04VUG-E1-AY 功能描述:MOSFET N-CH TO-252 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
NP90N04VUK 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR
NP90N04VUK-E1-AY 制造商:Renesas Electronics Corporation 功能描述:POWER DEVICE E AUTOMOTIVE MOS MP-3ZP - Tape and Reel 制造商:Renesas Electronics Corporation 功能描述:MOSFET N-CH 40V 90A TO-220
NP90N04VUK-E2-AY 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR
NP90N055MUK 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR
NP90N055MUK-S18-AY 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR